GQGF Electronics
EnglishEnglish
USD
MJD45H11-1G onsemi

Image shown is a representation. Verify specifications with the product datasheet.

onsemi

MJD45H11-1G

Bipolar (BJT) Transistor PNP 80 V 8 A 90MHz 1.75 W Through Hole I-PAK

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - Bipolar (BJT) - Single
Manufactureronsemi
Manufacturer Product NumberMJD45H11-1G
DescriptionBipolar (BJT) Transistor PNP 80 V 8 A 90MHz 1.75 W Through Hole I-PAK
CategoryTransistors - Bipolar (BJT) - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 1.14USD 1.14
10USD 1.1001USD 11.001
25USD 1.0602USD 26.505
100USD 1.0203USD 102.03
250USD 0.98040USD 245.10
500USD 0.94050USD 470.25
1,000USD 0.90060USD 900.60
  • Product Attributes
  • Ordering Notes

Bipolar (BJT) Transistor PNP 80 V 8 A 90MHz 1.75 W Through Hole I-PAK

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
Series-
PackageTube
Product StatusActive
Transistor TypePNP
Current - Collector (Ic) (Max)8 A
Voltage - Collector Emitter Breakdown (Max)80 V
Vce Saturation (Max) @ Ib, Ic1V @ 400mA, 8A
Current - Collector Cutoff (Max)1µA
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 4A, 1V
Power - Max1.75 W
Frequency - Transition90MHz
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
Supplier Device PackageI-PAK
Base Product NumberMJD45
Global Fast Shipping
100% Original Components
Quality Assured & Tested
Technical Support 24/7