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MJE13007G onsemi

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onsemi

MJE13007G

Bipolar (BJT) Transistor NPN 400 V 8 A 14MHz 80 W Through Hole TO-220

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - Bipolar (BJT) - Single
Manufactureronsemi
Manufacturer Product NumberMJE13007G
DescriptionBipolar (BJT) Transistor NPN 400 V 8 A 14MHz 80 W Through Hole TO-220
CategoryTransistors - Bipolar (BJT) - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 1.35USD 1.35
10USD 1.30275USD 13.0275
25USD 1.2555USD 31.3875
100USD 1.20825USD 120.825
250USD 1.161USD 290.25
500USD 1.11375USD 556.875
1,000USD 1.0665USD 1,066.50
  • Product Attributes
  • Ordering Notes

Bipolar (BJT) Transistor NPN 400 V 8 A 14MHz 80 W Through Hole TO-220

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
SeriesSWITCHMODE™
PackageTube
Product StatusActive
Transistor TypeNPN
Current - Collector (Ic) (Max)8 A
Voltage - Collector Emitter Breakdown (Max)400 V
Vce Saturation (Max) @ Ib, Ic3V @ 2A, 8A
Current - Collector Cutoff (Max)100µA
DC Current Gain (hFE) (Min) @ Ic, Vce5 @ 5A, 5V
Power - Max80 W
Frequency - Transition14MHz
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220
Base Product NumberMJE13007
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