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MJE15028G onsemi

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onsemi

MJE15028G

Bipolar (BJT) Transistor NPN 120 V 8 A 30MHz 50 W Through Hole TO-220

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - Bipolar (BJT) - Single
Manufactureronsemi
Manufacturer Product NumberMJE15028G
DescriptionBipolar (BJT) Transistor NPN 120 V 8 A 30MHz 50 W Through Hole TO-220
CategoryTransistors - Bipolar (BJT) - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 1.57USD 1.57
10USD 1.51505USD 15.1505
25USD 1.4601USD 36.5025
100USD 1.40515USD 140.515
250USD 1.3502USD 337.55
500USD 1.29525USD 647.625
1,000USD 1.2403USD 1,240.30
  • Product Attributes
  • Ordering Notes

Bipolar (BJT) Transistor NPN 120 V 8 A 30MHz 50 W Through Hole TO-220

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
Series-
PackageTube
Product StatusActive
Transistor TypeNPN
Current - Collector (Ic) (Max)8 A
Voltage - Collector Emitter Breakdown (Max)120 V
Vce Saturation (Max) @ Ib, Ic500mV @ 100mA, 1A
Current - Collector Cutoff (Max)100µA
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 4A, 2V
Power - Max50 W
Frequency - Transition30MHz
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220
Base Product NumberMJE15028
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