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MJE15029G onsemi

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onsemi

MJE15029G

Bipolar (BJT) Transistor PNP 120 V 8 A 30MHz 50 W Through Hole TO-220

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - Bipolar (BJT) - Single
Manufactureronsemi
Manufacturer Product NumberMJE15029G
DescriptionBipolar (BJT) Transistor PNP 120 V 8 A 30MHz 50 W Through Hole TO-220
CategoryTransistors - Bipolar (BJT) - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 2.31USD 2.31
10USD 2.22915USD 22.2915
25USD 2.1483USD 53.7075
100USD 2.06745USD 206.745
250USD 1.9866USD 496.65
500USD 1.90575USD 952.875
1,000USD 1.8249USD 1,824.90
  • Product Attributes
  • Ordering Notes

Bipolar (BJT) Transistor PNP 120 V 8 A 30MHz 50 W Through Hole TO-220

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
Series-
PackageTube
Product StatusActive
Transistor TypePNP
Current - Collector (Ic) (Max)8 A
Voltage - Collector Emitter Breakdown (Max)120 V
Vce Saturation (Max) @ Ib, Ic500mV @ 100mA, 1A
Current - Collector Cutoff (Max)100µA
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 4A, 2V
Power - Max50 W
Frequency - Transition30MHz
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220
Base Product NumberMJE15029
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MJE15029G | onsemi | GQGF Electronic Components