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MJE15030G

Bipolar (BJT) Transistor NPN 150 V 8 A 30MHz 50 W Through Hole TO-220

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - Bipolar (BJT) - Single
Manufactureronsemi
Manufacturer Product NumberMJE15030G
DescriptionBipolar (BJT) Transistor NPN 150 V 8 A 30MHz 50 W Through Hole TO-220
CategoryTransistors - Bipolar (BJT) - Single
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 1.84USD 1.84
10USD 1.7756USD 17.756
25USD 1.7112USD 42.78
100USD 1.6468USD 164.68
250USD 1.5824USD 395.60
500USD 1.518USD 759.00
1,000USD 1.4536USD 1,453.60
  • Product Attributes
  • Ordering Notes

Bipolar (BJT) Transistor NPN 150 V 8 A 30MHz 50 W Through Hole TO-220

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
Series-
PackageTube
Product StatusActive
Transistor TypeNPN
Current - Collector (Ic) (Max)8 A
Voltage - Collector Emitter Breakdown (Max)150 V
Vce Saturation (Max) @ Ib, Ic500mV @ 100mA, 1A
Current - Collector Cutoff (Max)100µA
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 4A, 2V
Power - Max50 W
Frequency - Transition30MHz
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220
Base Product NumberMJE15030
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