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MJE15032G

Bipolar (BJT) Transistor NPN 250 V 8 A 30MHz 50 W Through Hole TO-220

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - Bipolar (BJT) - Single
Manufactureronsemi
Manufacturer Product NumberMJE15032G
DescriptionBipolar (BJT) Transistor NPN 250 V 8 A 30MHz 50 W Through Hole TO-220
CategoryTransistors - Bipolar (BJT) - Single
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 1.66USD 1.66
10USD 1.6019USD 16.019
25USD 1.5438USD 38.595
100USD 1.4857USD 148.57
250USD 1.4276USD 356.90
500USD 1.3695USD 684.75
1,000USD 1.3114USD 1,311.40
  • Product Attributes
  • Ordering Notes

Bipolar (BJT) Transistor NPN 250 V 8 A 30MHz 50 W Through Hole TO-220

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
Series-
PackageTube
Product StatusActive
Transistor TypeNPN
Current - Collector (Ic) (Max)8 A
Voltage - Collector Emitter Breakdown (Max)250 V
Vce Saturation (Max) @ Ib, Ic500mV @ 100mA, 1A
Current - Collector Cutoff (Max)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce10 @ 2A, 5V
Power - Max50 W
Frequency - Transition30MHz
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220
Base Product NumberMJE15032
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MJE15032G | onsemi | GQGF Electronic Components