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MJE15034G onsemi

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onsemi

MJE15034G

Bipolar (BJT) Transistor NPN 350 V 4 A 30MHz 2 W Through Hole TO-220

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - Bipolar (BJT) - Single
Manufactureronsemi
Manufacturer Product NumberMJE15034G
DescriptionBipolar (BJT) Transistor NPN 350 V 4 A 30MHz 2 W Through Hole TO-220
CategoryTransistors - Bipolar (BJT) - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 1.54USD 1.54
10USD 1.4861USD 14.861
25USD 1.4322USD 35.805
100USD 1.3783USD 137.83
250USD 1.3244USD 331.10
500USD 1.2705USD 635.25
1,000USD 1.2166USD 1,216.60
  • Product Attributes
  • Ordering Notes

Bipolar (BJT) Transistor NPN 350 V 4 A 30MHz 2 W Through Hole TO-220

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
Series-
PackageTube
Product StatusActive
Transistor TypeNPN
Current - Collector (Ic) (Max)4 A
Voltage - Collector Emitter Breakdown (Max)350 V
Vce Saturation (Max) @ Ib, Ic500mV @ 100mA, 1A
Current - Collector Cutoff (Max)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce10 @ 2A, 5V
Power - Max2 W
Frequency - Transition30MHz
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220
Base Product NumberMJE15034
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