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MJE170G onsemi

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onsemi

MJE170G

Bipolar (BJT) Transistor PNP 40 V 3 A 50MHz 1.5 W Through Hole TO-126

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - Bipolar (BJT) - Single
Manufactureronsemi
Manufacturer Product NumberMJE170G
DescriptionBipolar (BJT) Transistor PNP 40 V 3 A 50MHz 1.5 W Through Hole TO-126
CategoryTransistors - Bipolar (BJT) - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 0.88000USD 0.88000
10USD 0.84920USD 8.492
25USD 0.81840USD 20.46
100USD 0.78760USD 78.76
250USD 0.75680USD 189.20
500USD 0.72600USD 363.00
1,000USD 0.69520USD 695.20
  • Product Attributes
  • Ordering Notes

Bipolar (BJT) Transistor PNP 40 V 3 A 50MHz 1.5 W Through Hole TO-126

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
Series-
PackageBulk
Product StatusActive
Transistor TypePNP
Current - Collector (Ic) (Max)3 A
Voltage - Collector Emitter Breakdown (Max)40 V
Vce Saturation (Max) @ Ib, Ic1.7V @ 600mA, 3A
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 100mA, 1V
Power - Max1.5 W
Frequency - Transition50MHz
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-225AA, TO-126-3
Supplier Device PackageTO-126
Base Product NumberMJE170
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