GQGF Electronics
EnglishEnglish
USD
MJE18008 onsemi

Image shown is a representation. Verify specifications with the product datasheet.

onsemi

MJE18008

Bipolar (BJT) Transistor NPN 450 V 8 A 13MHz 125 W Through Hole TO-220

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - Bipolar (BJT) - Single
Manufactureronsemi
Manufacturer Product NumberMJE18008
DescriptionBipolar (BJT) Transistor NPN 450 V 8 A 13MHz 125 W Through Hole TO-220
CategoryTransistors - Bipolar (BJT) - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 0.00000USD 0.00000
10USD 0.00000USD 0.00000
25USD 0.00000USD 0.00000
100USD 0.00000USD 0.00000
250USD 0.00000USD 0.00000
500USD 0.00000USD 0.00000
1,000USD 0.00000USD 0.00000
  • Product Attributes
  • Ordering Notes

Bipolar (BJT) Transistor NPN 450 V 8 A 13MHz 125 W Through Hole TO-220

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
SeriesSWITCHMODE™
PackageTube
Product StatusObsolete
Transistor TypeNPN
Current - Collector (Ic) (Max)8 A
Voltage - Collector Emitter Breakdown (Max)450 V
Vce Saturation (Max) @ Ib, Ic700mV @ 900mA, 4.5V
Current - Collector Cutoff (Max)100µA
DC Current Gain (hFE) (Min) @ Ic, Vce14 @ 1A, 5V
Power - Max125 W
Frequency - Transition13MHz
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220
Base Product NumberMJE18
Global Fast Shipping
100% Original Components
Quality Assured & Tested
Technical Support 24/7