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MJE18008G onsemi

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onsemi

MJE18008G

Bipolar (BJT) Transistor NPN 450 V 8 A 13MHz 125 W Through Hole TO-220

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - Bipolar (BJT) - Single
Manufactureronsemi
Manufacturer Product NumberMJE18008G
DescriptionBipolar (BJT) Transistor NPN 450 V 8 A 13MHz 125 W Through Hole TO-220
CategoryTransistors - Bipolar (BJT) - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 2.26USD 2.26
10USD 2.1809USD 21.809
25USD 2.1018USD 52.545
100USD 2.0227USD 202.27
250USD 1.9436USD 485.90
500USD 1.8645USD 932.25
1,000USD 1.7854USD 1,785.40
  • Product Attributes
  • Ordering Notes

Bipolar (BJT) Transistor NPN 450 V 8 A 13MHz 125 W Through Hole TO-220

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
SeriesSWITCHMODE™
PackageTube
Product StatusActive
Transistor TypeNPN
Current - Collector (Ic) (Max)8 A
Voltage - Collector Emitter Breakdown (Max)450 V
Vce Saturation (Max) @ Ib, Ic700mV @ 900mA, 4.5V
Current - Collector Cutoff (Max)100µA
DC Current Gain (hFE) (Min) @ Ic, Vce14 @ 1A, 5V
Power - Max125 W
Frequency - Transition13MHz
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220
Base Product NumberMJE18008
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