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MJE180G onsemi

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onsemi

MJE180G

Bipolar (BJT) Transistor NPN 40 V 3 A 50MHz 1.5 W Through Hole TO-126

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - Bipolar (BJT) - Single
Manufactureronsemi
Manufacturer Product NumberMJE180G
DescriptionBipolar (BJT) Transistor NPN 40 V 3 A 50MHz 1.5 W Through Hole TO-126
CategoryTransistors - Bipolar (BJT) - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 0.86000USD 0.86000
10USD 0.82990USD 8.299
25USD 0.79980USD 19.995
100USD 0.76970USD 76.97
250USD 0.73960USD 184.90
500USD 0.70950USD 354.75
1,000USD 0.67940USD 679.40
  • Product Attributes
  • Ordering Notes

Bipolar (BJT) Transistor NPN 40 V 3 A 50MHz 1.5 W Through Hole TO-126

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
Series-
PackageBulk
Product StatusActive
Transistor TypeNPN
Current - Collector (Ic) (Max)3 A
Voltage - Collector Emitter Breakdown (Max)40 V
Vce Saturation (Max) @ Ib, Ic1.7V @ 600mA, 3A
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 100mA, 1V
Power - Max1.5 W
Frequency - Transition50MHz
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-225AA, TO-126-3
Supplier Device PackageTO-126
Base Product NumberMJE180
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