GQGF Electronics
EnglishEnglish
USD
MJE200G onsemi

Image shown is a representation. Verify specifications with the product datasheet.

onsemi

MJE200G

Bipolar (BJT) Transistor NPN 40 V 5 A 65MHz 15 W Through Hole TO-126

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - Bipolar (BJT) - Single
Manufactureronsemi
Manufacturer Product NumberMJE200G
DescriptionBipolar (BJT) Transistor NPN 40 V 5 A 65MHz 15 W Through Hole TO-126
CategoryTransistors - Bipolar (BJT) - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 0.72000USD 0.72000
10USD 0.69480USD 6.948
25USD 0.66960USD 16.74
100USD 0.64440USD 64.44
250USD 0.61920USD 154.80
500USD 0.59400USD 297.00
1,000USD 0.56880USD 568.80
  • Product Attributes
  • Ordering Notes

Bipolar (BJT) Transistor NPN 40 V 5 A 65MHz 15 W Through Hole TO-126

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
Series-
PackageBulk
Product StatusActive
Transistor TypeNPN
Current - Collector (Ic) (Max)5 A
Voltage - Collector Emitter Breakdown (Max)40 V
Vce Saturation (Max) @ Ib, Ic1.8V @ 1A, 5A
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce45 @ 2A, 1V
Power - Max15 W
Frequency - Transition65MHz
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-225AA, TO-126-3
Supplier Device PackageTO-126
Base Product NumberMJE200
Global Fast Shipping
100% Original Components
Quality Assured & Tested
Technical Support 24/7