GQGF Electronics
EnglishEnglish
USD
MJE243G onsemi

Image shown is a representation. Verify specifications with the product datasheet.

onsemi

MJE243G

Bipolar (BJT) Transistor NPN 100 V 4 A 40MHz 1.5 W Through Hole TO-126

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - Bipolar (BJT) - Single
Manufactureronsemi
Manufacturer Product NumberMJE243G
DescriptionBipolar (BJT) Transistor NPN 100 V 4 A 40MHz 1.5 W Through Hole TO-126
CategoryTransistors - Bipolar (BJT) - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 0.66000USD 0.66000
10USD 0.63690USD 6.369
25USD 0.61380USD 15.345
100USD 0.59070USD 59.07
250USD 0.56760USD 141.90
500USD 0.54450USD 272.25
1,000USD 0.52140USD 521.40
  • Product Attributes
  • Ordering Notes

Bipolar (BJT) Transistor NPN 100 V 4 A 40MHz 1.5 W Through Hole TO-126

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
Series-
PackageBulk
Product StatusActive
Transistor TypeNPN
Current - Collector (Ic) (Max)4 A
Voltage - Collector Emitter Breakdown (Max)100 V
Vce Saturation (Max) @ Ib, Ic600mV @ 100mA, 1A
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 200mA, 1V
Power - Max1.5 W
Frequency - Transition40MHz
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-225AA, TO-126-3
Supplier Device PackageTO-126
Base Product NumberMJE243
Global Fast Shipping
100% Original Components
Quality Assured & Tested
Technical Support 24/7