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MJE270G onsemi

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MJE270G

Bipolar (BJT) Transistor NPN - Darlington 100 V 2 A 6MHz 1.5 W Through Hole TO-126

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - Bipolar (BJT) - Single
Manufactureronsemi
Manufacturer Product NumberMJE270G
DescriptionBipolar (BJT) Transistor NPN - Darlington 100 V 2 A 6MHz 1.5 W Through Hole TO-126
CategoryTransistors - Bipolar (BJT) - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 0.81000USD 0.81000
10USD 0.78165USD 7.8165
25USD 0.75330USD 18.8325
100USD 0.72495USD 72.495
250USD 0.69660USD 174.15
500USD 0.66825USD 334.125
1,000USD 0.63990USD 639.90
  • Product Attributes
  • Ordering Notes

Bipolar (BJT) Transistor NPN - Darlington 100 V 2 A 6MHz 1.5 W Through Hole TO-126

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
Series-
PackageBulk
Product StatusActive
Transistor TypeNPN - Darlington
Current - Collector (Ic) (Max)2 A
Voltage - Collector Emitter Breakdown (Max)100 V
Vce Saturation (Max) @ Ib, Ic3V @ 1.2mA, 120mA
Current - Collector Cutoff (Max)1mA
DC Current Gain (hFE) (Min) @ Ic, Vce1500 @ 120mA, 10V
Power - Max1.5 W
Frequency - Transition6MHz
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-225AA, TO-126-3
Supplier Device PackageTO-126
Base Product NumberMJE270
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