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onsemi

MJE2955TG

Bipolar (BJT) Transistor PNP 60 V 10 A 2MHz 75 W Through Hole TO-220

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Lifecycleactive

PackageStandard

Lead TimeRFQ Required

Product DetailsTransistors - Bipolar (BJT) - Single

Manufactureronsemi

Manufacturer Product NumberMJE2955TG

DescriptionBipolar (BJT) Transistor PNP 60 V 10 A 2MHz 75 W Through Hole TO-220

CategoryTransistors - Bipolar (BJT) - Single

EDA / CAD Models

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Bipolar (BJT) Transistor PNP 60 V 10 A 2MHz 75 W Through Hole TO-220

Mfronsemi

Series-

PackageTube

Product StatusActive

Transistor TypePNP

Current - Collector (Ic) (Max)10 A

Voltage - Collector Emitter Breakdown (Max)60 V

Vce Saturation (Max) @ Ib, Ic8V @ 3.3A, 10A

Current - Collector Cutoff (Max)700µA

DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 4A, 4V

Power - Max75 W

Frequency - Transition2MHz

Operating Temperature-55°C ~ 150°C (TJ)

Mounting TypeThrough Hole

Package / CaseTO-220-3

Supplier Device PackageTO-220

Base Product NumberMJE2955