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MJE3055TG onsemi

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onsemi

MJE3055TG

Bipolar (BJT) Transistor NPN 60 V 10 A 2MHz 75 W Through Hole TO-220

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - Bipolar (BJT) - Single
Manufactureronsemi
Manufacturer Product NumberMJE3055TG
DescriptionBipolar (BJT) Transistor NPN 60 V 10 A 2MHz 75 W Through Hole TO-220
CategoryTransistors - Bipolar (BJT) - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 0.94000USD 0.94000
10USD 0.90710USD 9.071
25USD 0.87420USD 21.855
100USD 0.84130USD 84.13
250USD 0.80840USD 202.10
500USD 0.77550USD 387.75
1,000USD 0.74260USD 742.60
  • Product Attributes
  • Ordering Notes

Bipolar (BJT) Transistor NPN 60 V 10 A 2MHz 75 W Through Hole TO-220

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
Series-
PackageTube
Product StatusActive
Transistor TypeNPN
Current - Collector (Ic) (Max)10 A
Voltage - Collector Emitter Breakdown (Max)60 V
Vce Saturation (Max) @ Ib, Ic8V @ 3.3A, 10A
Current - Collector Cutoff (Max)700µA
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 4A, 4V
Power - Max75 W
Frequency - Transition2MHz
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220
Base Product NumberMJE3055
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