GQGF Electronics
EnglishEnglish
USD
MJE340G onsemi

Image shown is a representation. Verify specifications with the product datasheet.

onsemi

MJE340G

Bipolar (BJT) Transistor NPN 300 V 500 mA 20 W Through Hole TO-126

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - Bipolar (BJT) - Single
Manufactureronsemi
Manufacturer Product NumberMJE340G
DescriptionBipolar (BJT) Transistor NPN 300 V 500 mA 20 W Through Hole TO-126
CategoryTransistors - Bipolar (BJT) - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 0.64000USD 0.64000
10USD 0.61760USD 6.176
25USD 0.59520USD 14.88
100USD 0.57280USD 57.28
250USD 0.55040USD 137.60
500USD 0.52800USD 264.00
1,000USD 0.50560USD 505.60
  • Product Attributes
  • Ordering Notes

Bipolar (BJT) Transistor NPN 300 V 500 mA 20 W Through Hole TO-126

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
Series-
PackageBulk
Product StatusActive
Transistor TypeNPN
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)300 V
Vce Saturation (Max) @ Ib, Ic-
Current - Collector Cutoff (Max)100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 50mA, 10V
Power - Max20 W
Frequency - Transition-
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-225AA, TO-126-3
Supplier Device PackageTO-126
Base Product NumberMJE340
Global Fast Shipping
100% Original Components
Quality Assured & Tested
Technical Support 24/7
MJE340G | onsemi | GQGF Electronic Components