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MJE3439G

Bipolar (BJT) Transistor NPN 350 V 300 mA 15MHz 15 W Through Hole TO-126

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - Bipolar (BJT) - Single
Manufactureronsemi
Manufacturer Product NumberMJE3439G
DescriptionBipolar (BJT) Transistor NPN 350 V 300 mA 15MHz 15 W Through Hole TO-126
CategoryTransistors - Bipolar (BJT) - Single
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 0.00000USD 0.00000
10USD 0.00000USD 0.00000
25USD 0.00000USD 0.00000
100USD 0.00000USD 0.00000
250USD 0.00000USD 0.00000
500USD 0.00000USD 0.00000
1,000USD 0.00000USD 0.00000
  • Product Attributes
  • Ordering Notes

Bipolar (BJT) Transistor NPN 350 V 300 mA 15MHz 15 W Through Hole TO-126

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
Series-
PackageBulk
Product StatusObsolete
Transistor TypeNPN
Current - Collector (Ic) (Max)300 mA
Voltage - Collector Emitter Breakdown (Max)350 V
Vce Saturation (Max) @ Ib, Ic500mV @ 4mA, 50mA
Current - Collector Cutoff (Max)20µA
DC Current Gain (hFE) (Min) @ Ic, Vce15 @ 20mA, 10V
Power - Max15 W
Frequency - Transition15MHz
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-225AA, TO-126-3
Supplier Device PackageTO-126
Base Product NumberMJE3439
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