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MJE350G onsemi

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MJE350G

Bipolar (BJT) Transistor PNP 300 V 500 mA 20 W Through Hole TO-126

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - Bipolar (BJT) - Single
Manufactureronsemi
Manufacturer Product NumberMJE350G
DescriptionBipolar (BJT) Transistor PNP 300 V 500 mA 20 W Through Hole TO-126
CategoryTransistors - Bipolar (BJT) - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 0.78000USD 0.78000
10USD 0.75270USD 7.527
25USD 0.72540USD 18.135
100USD 0.69810USD 69.81
250USD 0.67080USD 167.70
500USD 0.64350USD 321.75
1,000USD 0.61620USD 616.20
  • Product Attributes
  • Ordering Notes

Bipolar (BJT) Transistor PNP 300 V 500 mA 20 W Through Hole TO-126

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
Series-
PackageBulk
Product StatusActive
Transistor TypePNP
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)300 V
Vce Saturation (Max) @ Ib, Ic-
Current - Collector Cutoff (Max)100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 50mA, 10V
Power - Max20 W
Frequency - Transition-
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-225AA, TO-126-3
Supplier Device PackageTO-126
Base Product NumberMJE350
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