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onsemi

MJE371G

Bipolar (BJT) Transistor PNP 40 V 4 A 40 W Through Hole TO-126

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PackageStandard

Lead TimeRFQ Required

Product DetailsTransistors - Bipolar (BJT) - Single

Manufactureronsemi

Manufacturer Product NumberMJE371G

DescriptionBipolar (BJT) Transistor PNP 40 V 4 A 40 W Through Hole TO-126

CategoryTransistors - Bipolar (BJT) - Single

EDA / CAD Models

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Bipolar (BJT) Transistor PNP 40 V 4 A 40 W Through Hole TO-126

Mfronsemi

Series-

PackageBulk

Product StatusActive

Transistor TypePNP

Current - Collector (Ic) (Max)4 A

Voltage - Collector Emitter Breakdown (Max)40 V

Vce Saturation (Max) @ Ib, Ic-

Current - Collector Cutoff (Max)100µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 1A, 1V

Power - Max40 W

Frequency - Transition-

Operating Temperature-65°C ~ 150°C (TJ)

Mounting TypeThrough Hole

Package / CaseTO-225AA, TO-126-3

Supplier Device PackageTO-126

Base Product NumberMJE371