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MJE5730G onsemi

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onsemi

MJE5730G

Bipolar (BJT) Transistor PNP 300 V 1 A 10MHz 40 W Through Hole TO-220

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - Bipolar (BJT) - Single
Manufactureronsemi
Manufacturer Product NumberMJE5730G
DescriptionBipolar (BJT) Transistor PNP 300 V 1 A 10MHz 40 W Through Hole TO-220
CategoryTransistors - Bipolar (BJT) - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 2.16USD 2.16
10USD 2.0844USD 20.844
25USD 2.0088USD 50.22
100USD 1.9332USD 193.32
250USD 1.8576USD 464.40
500USD 1.782USD 891.00
1,000USD 1.7064USD 1,706.40
  • Product Attributes
  • Ordering Notes

Bipolar (BJT) Transistor PNP 300 V 1 A 10MHz 40 W Through Hole TO-220

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
Series-
PackageTube
Product StatusActive
Transistor TypePNP
Current - Collector (Ic) (Max)1 A
Voltage - Collector Emitter Breakdown (Max)300 V
Vce Saturation (Max) @ Ib, Ic1V @ 200mA, 1A
Current - Collector Cutoff (Max)1mA
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 300mA, 10V
Power - Max40 W
Frequency - Transition10MHz
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220
Base Product NumberMJE5730
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