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MJE5731AG onsemi

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onsemi

MJE5731AG

Bipolar (BJT) Transistor PNP 375 V 1 A 10MHz 40 W Through Hole TO-220

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - Bipolar (BJT) - Single
Manufactureronsemi
Manufacturer Product NumberMJE5731AG
DescriptionBipolar (BJT) Transistor PNP 375 V 1 A 10MHz 40 W Through Hole TO-220
CategoryTransistors - Bipolar (BJT) - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 1.35USD 1.35
10USD 1.30275USD 13.0275
25USD 1.2555USD 31.3875
100USD 1.20825USD 120.825
250USD 1.161USD 290.25
500USD 1.11375USD 556.875
1,000USD 1.0665USD 1,066.50
  • Product Attributes
  • Ordering Notes

Bipolar (BJT) Transistor PNP 375 V 1 A 10MHz 40 W Through Hole TO-220

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
Series-
PackageTube
Product StatusActive
Transistor TypePNP
Current - Collector (Ic) (Max)1 A
Voltage - Collector Emitter Breakdown (Max)375 V
Vce Saturation (Max) @ Ib, Ic1V @ 200mA, 1A
Current - Collector Cutoff (Max)1mA
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 300mA, 10V
Power - Max40 W
Frequency - Transition10MHz
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220
Base Product NumberMJE5731
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