GQGF Electronics
EnglishEnglish
USD
MJE5852G onsemi

Image shown is a representation. Verify specifications with the product datasheet.

onsemi

MJE5852G

Bipolar (BJT) Transistor PNP 400 V 8 A 80 W Through Hole TO-220

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - Bipolar (BJT) - Single
Manufactureronsemi
Manufacturer Product NumberMJE5852G
DescriptionBipolar (BJT) Transistor PNP 400 V 8 A 80 W Through Hole TO-220
CategoryTransistors - Bipolar (BJT) - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 3.46USD 3.46
10USD 3.3389USD 33.389
25USD 3.2178USD 80.445
100USD 3.0967USD 309.67
250USD 2.9756USD 743.90
500USD 2.8545USD 1,427.25
1,000USD 2.7334USD 2,733.40
  • Product Attributes
  • Ordering Notes

Bipolar (BJT) Transistor PNP 400 V 8 A 80 W Through Hole TO-220

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
SeriesSWITCHMODE™
PackageTube
Product StatusActive
Transistor TypePNP
Current - Collector (Ic) (Max)8 A
Voltage - Collector Emitter Breakdown (Max)400 V
Vce Saturation (Max) @ Ib, Ic5V @ 3A, 8A
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce5 @ 5A, 5V
Power - Max80 W
Frequency - Transition-
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220
Base Product NumberMJE5852
Global Fast Shipping
100% Original Components
Quality Assured & Tested
Technical Support 24/7