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onsemi

MJE702G

Bipolar (BJT) Transistor PNP - Darlington 80 V 4 A 40 W Through Hole TO-126

Stock0 pcs

Lifecycleactive

PackageStandard

Lead TimeRFQ Required

Product DetailsTransistors - Bipolar (BJT) - Single

Manufactureronsemi

Manufacturer Product NumberMJE702G

DescriptionBipolar (BJT) Transistor PNP - Darlington 80 V 4 A 40 W Through Hole TO-126

CategoryTransistors - Bipolar (BJT) - Single

EDA / CAD Models

Price & AvailabilityQuote Required

Bipolar (BJT) Transistor PNP - Darlington 80 V 4 A 40 W Through Hole TO-126

Mfronsemi

Series-

PackageBulk

Product StatusObsolete

Transistor TypePNP - Darlington

Current - Collector (Ic) (Max)4 A

Voltage - Collector Emitter Breakdown (Max)80 V

Vce Saturation (Max) @ Ib, Ic2.5V @ 30mA, 1.5A

Current - Collector Cutoff (Max)100µA

DC Current Gain (hFE) (Min) @ Ic, Vce750 @ 1.5A, 3V

Power - Max40 W

Frequency - Transition-

Operating Temperature-55°C ~ 150°C (TJ)

Mounting TypeThrough Hole

Package / CaseTO-225AA, TO-126-3

Supplier Device PackageTO-126

Base Product NumberMJE702