GQGF Electronics
EnglishEnglish
USD
MJE803 onsemi

Image shown is a representation. Verify specifications with the product datasheet.

onsemi

MJE803

Bipolar (BJT) Transistor NPN - Darlington 80 V 4 A 40 W Through Hole TO-126

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - Bipolar (BJT) - Single
Manufactureronsemi
Manufacturer Product NumberMJE803
DescriptionBipolar (BJT) Transistor NPN - Darlington 80 V 4 A 40 W Through Hole TO-126
CategoryTransistors - Bipolar (BJT) - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 0.00000USD 0.00000
10USD 0.00000USD 0.00000
25USD 0.00000USD 0.00000
100USD 0.00000USD 0.00000
250USD 0.00000USD 0.00000
500USD 0.00000USD 0.00000
1,000USD 0.00000USD 0.00000
  • Product Attributes
  • Ordering Notes

Bipolar (BJT) Transistor NPN - Darlington 80 V 4 A 40 W Through Hole TO-126

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
Series-
PackageBulk
Product StatusObsolete
Transistor TypeNPN - Darlington
Current - Collector (Ic) (Max)4 A
Voltage - Collector Emitter Breakdown (Max)80 V
Vce Saturation (Max) @ Ib, Ic2.8V @ 40mA, 2A
Current - Collector Cutoff (Max)100µA
DC Current Gain (hFE) (Min) @ Ic, Vce750 @ 2A, 3V
Power - Max40 W
Frequency - Transition-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-225AA, TO-126-3
Supplier Device PackageTO-126
Base Product NumberMJE803
Global Fast Shipping
100% Original Components
Quality Assured & Tested
Technical Support 24/7