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MJH11017G onsemi

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onsemi

MJH11017G

Bipolar (BJT) Transistor PNP - Darlington 150 V 15 A 3MHz 150 W Through Hole TO-247-3

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - Bipolar (BJT) - Single
Manufactureronsemi
Manufacturer Product NumberMJH11017G
DescriptionBipolar (BJT) Transistor PNP - Darlington 150 V 15 A 3MHz 150 W Through Hole TO-247-3
CategoryTransistors - Bipolar (BJT) - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 5.61USD 5.61
10USD 5.41365USD 54.1365
25USD 5.2173USD 130.4325
100USD 5.02095USD 502.095
250USD 4.8246USD 1,206.15
500USD 4.62825USD 2,314.125
1,000USD 4.4319USD 4,431.90
  • Product Attributes
  • Ordering Notes

Bipolar (BJT) Transistor PNP - Darlington 150 V 15 A 3MHz 150 W Through Hole TO-247-3

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
Series-
PackageTube
Product StatusActive
Transistor TypePNP - Darlington
Current - Collector (Ic) (Max)15 A
Voltage - Collector Emitter Breakdown (Max)150 V
Vce Saturation (Max) @ Ib, Ic4V @ 150mA, 15A
Current - Collector Cutoff (Max)1mA
DC Current Gain (hFE) (Min) @ Ic, Vce400 @ 10A, 5V
Power - Max150 W
Frequency - Transition3MHz
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247-3
Base Product NumberMJH11017
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