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MJL21196G onsemi

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onsemi

MJL21196G

Bipolar (BJT) Transistor NPN 250 V 16 A 4MHz 200 W Through Hole TO-264

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - Bipolar (BJT) - Single
Manufactureronsemi
Manufacturer Product NumberMJL21196G
DescriptionBipolar (BJT) Transistor NPN 250 V 16 A 4MHz 200 W Through Hole TO-264
CategoryTransistors - Bipolar (BJT) - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 5.42USD 5.42
10USD 5.2303USD 52.303
25USD 5.0406USD 126.015
100USD 4.8509USD 485.09
250USD 4.6612USD 1,165.30
500USD 4.4715USD 2,235.75
1,000USD 4.2818USD 4,281.80
  • Product Attributes
  • Ordering Notes

Bipolar (BJT) Transistor NPN 250 V 16 A 4MHz 200 W Through Hole TO-264

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
Series-
PackageTube
Product StatusActive
Transistor TypeNPN
Current - Collector (Ic) (Max)16 A
Voltage - Collector Emitter Breakdown (Max)250 V
Vce Saturation (Max) @ Ib, Ic4V @ 3.2A, 16A
Current - Collector Cutoff (Max)100µA
DC Current Gain (hFE) (Min) @ Ic, Vce25 @ 8A, 5V
Power - Max200 W
Frequency - Transition4MHz
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-264-3, TO-264AA
Supplier Device PackageTO-264
Base Product NumberMJL21196
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