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MJW21196G onsemi

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onsemi

MJW21196G

Bipolar (BJT) Transistor NPN 250 V 16 A 4MHz 200 W Through Hole TO-247-3

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - Bipolar (BJT) - Single
Manufactureronsemi
Manufacturer Product NumberMJW21196G
DescriptionBipolar (BJT) Transistor NPN 250 V 16 A 4MHz 200 W Through Hole TO-247-3
CategoryTransistors - Bipolar (BJT) - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 5.56USD 5.56
10USD 5.3654USD 53.654
25USD 5.1708USD 129.27
100USD 4.9762USD 497.62
250USD 4.7816USD 1,195.40
500USD 4.587USD 2,293.50
1,000USD 4.3924USD 4,392.40
  • Product Attributes
  • Ordering Notes

Bipolar (BJT) Transistor NPN 250 V 16 A 4MHz 200 W Through Hole TO-247-3

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
Series-
PackageTube
Product StatusActive
Transistor TypeNPN
Current - Collector (Ic) (Max)16 A
Voltage - Collector Emitter Breakdown (Max)250 V
Vce Saturation (Max) @ Ib, Ic3V @ 3.2A, 16A
Current - Collector Cutoff (Max)100µA
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 8A, 5V
Power - Max200 W
Frequency - Transition4MHz
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247-3
Base Product NumberMJW21196
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