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onsemi

MPS3563

Bipolar (BJT) Transistor NPN 12 V 50 mA 600MHz 350 mW Through Hole TO-92 (TO-226)

Stock0 pcs

Lifecycleactive

PackageStandard

Lead TimeRFQ Required

Product DetailsTransistors - Bipolar (BJT) - Single

Manufactureronsemi

Manufacturer Product NumberMPS3563

DescriptionBipolar (BJT) Transistor NPN 12 V 50 mA 600MHz 350 mW Through Hole TO-92 (TO-226)

CategoryTransistors - Bipolar (BJT) - Single

EDA / CAD Models

Price & AvailabilityQuote Required

Bipolar (BJT) Transistor NPN 12 V 50 mA 600MHz 350 mW Through Hole TO-92 (TO-226)

Mfronsemi

Series-

PackageBulk

Product StatusObsolete

Transistor TypeNPN

Current - Collector (Ic) (Max)50 mA

Voltage - Collector Emitter Breakdown (Max)12 V

Vce Saturation (Max) @ Ib, Ic-

Current - Collector Cutoff (Max)10nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 8mA, 10V

Power - Max350 mW

Frequency - Transition600MHz

Operating Temperature-55°C ~ 150°C (TJ)

Mounting TypeThrough Hole

Package / CaseTO-226-3, TO-92-3 Long Body

Supplier Device PackageTO-92 (TO-226)

Base Product NumberMPS356