GQGF Electronics
EnglishEnglish
USD
NSBC114YDXV6T1G onsemi

Image shown is a representation. Verify specifications with the product datasheet.

onsemi

NSBC114YDXV6T1G

Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 500mW Surface Mount SOT-563

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - Bipolar (BJT) - Arrays, Pre-Biased
Manufactureronsemi
Manufacturer Product NumberNSBC114YDXV6T1G
DescriptionPre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 500mW Surface Mount SOT-563
CategoryTransistors - Bipolar (BJT) - Arrays, Pre-Biased
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 0.47000USD 0.47000
10USD 0.45355USD 4.5355
25USD 0.43710USD 10.9275
100USD 0.42065USD 42.065
250USD 0.40420USD 101.05
500USD 0.38775USD 193.875
1,000USD 0.37130USD 371.30
  • Product Attributes
  • Ordering Notes

Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 500mW Surface Mount SOT-563

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
Series-
PackageTape & Reel (TR), Cut Tape (CT), Digi-Reel®
Product StatusActive
Transistor Type2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)10kOhms
Resistor - Emitter Base (R2)47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition-
Power - Max500mW
Mounting TypeSurface Mount
Package / CaseSOT-563, SOT-666
Supplier Device PackageSOT-563
Base Product NumberNSBC114
Global Fast Shipping
100% Original Components
Quality Assured & Tested
Technical Support 24/7