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NTB125N02RT4G onsemi

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onsemi

NTB125N02RT4G

N-Channel 24 V 95A (Ta), 120.5A (Tc) 1.98W (Ta), 113.6W (Tc) Surface Mount D2PAK

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
Manufactureronsemi
Manufacturer Product NumberNTB125N02RT4G
DescriptionN-Channel 24 V 95A (Ta), 120.5A (Tc) 1.98W (Ta), 113.6W (Tc) Surface Mount D2PAK
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 0.00000USD 0.00000
10USD 0.00000USD 0.00000
25USD 0.00000USD 0.00000
100USD 0.00000USD 0.00000
250USD 0.00000USD 0.00000
500USD 0.00000USD 0.00000
1,000USD 0.00000USD 0.00000
  • Product Attributes
  • Ordering Notes

N-Channel 24 V 95A (Ta), 120.5A (Tc) 1.98W (Ta), 113.6W (Tc) Surface Mount D2PAK

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
Series-
PackageTape & Reel (TR)
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)24 V
Current - Continuous Drain (Id) @ 25°C95A (Ta), 120.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs4.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs28 nC @ 4.5 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3440 pF @ 20 V
FET Feature-
Power Dissipation (Max)1.98W (Ta), 113.6W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product NumberNTB12
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