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NTBG022N120M3S onsemi
NTBG022N120M3S onsemi

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onsemi

NTBG022N120M3S

N-Channel 1200 V 58A (Tc) 234W (Tc) Surface Mount D2PAK-7

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
Manufactureronsemi
Manufacturer Product NumberNTBG022N120M3S
DescriptionN-Channel 1200 V 58A (Tc) 234W (Tc) Surface Mount D2PAK-7
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 37.51USD 37.51
10USD 36.19715USD 361.9715
25USD 34.8843USD 872.1075
100USD 33.57145USD 3,357.145
250USD 32.2586USD 8,064.65
500USD 30.94575USD 15,472.875
1,000USD 29.6329USD 29,632.90
  • Product Attributes
  • Ordering Notes

N-Channel 1200 V 58A (Tc) 234W (Tc) Surface Mount D2PAK-7

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
Series-
PackageTape & Reel (TR), Cut Tape (CT), Digi-Reel®
Product StatusActive
FET TypeN-Channel
TechnologySiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C58A (Tc)
Drive Voltage (Max Rds On, Min Rds On)18V
Rds On (Max) @ Id, Vgs30mOhm @ 40A, 18V
Vgs(th) (Max) @ Id4.4V @ 20mA
Gate Charge (Qg) (Max) @ Vgs20 nC @ 18 V
Vgs (Max)+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds3200 pF @ 800 V
FET Feature-
Power Dissipation (Max)234W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK-7
Package / CaseTO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Base Product NumberNTBG022
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