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NTH4L014N120M3P onsemi
NTH4L014N120M3P onsemi

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onsemi

NTH4L014N120M3P

N-Channel 1200 V 127A (Tc) 686W (Tc) Through Hole TO-247-4L

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
Manufactureronsemi
Manufacturer Product NumberNTH4L014N120M3P
DescriptionN-Channel 1200 V 127A (Tc) 686W (Tc) Through Hole TO-247-4L
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 50.03USD 50.03
10USD 48.27895USD 482.7895
25USD 46.5279USD 1,163.1975
100USD 44.77685USD 4,477.685
250USD 43.0258USD 10,756.45
500USD 41.27475USD 20,637.375
1,000USD 39.5237USD 39,523.70
  • Product Attributes
  • Ordering Notes

N-Channel 1200 V 127A (Tc) 686W (Tc) Through Hole TO-247-4L

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
Series-
PackageTube
Product StatusActive
FET TypeN-Channel
TechnologySiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C127A (Tc)
Drive Voltage (Max Rds On, Min Rds On)15V, 18V
Rds On (Max) @ Id, Vgs20mOhm @ 74A, 18V
Vgs(th) (Max) @ Id4.63V @ 37mA
Gate Charge (Qg) (Max) @ Vgs329 nC @ 18 V
Vgs (Max)+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds6230 pF @ 800 V
FET Feature-
Power Dissipation (Max)686W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-4L
Package / CaseTO-247-4
Base Product NumberNTH4L014
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