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NTH4L020N090SC1 onsemi
NTH4L020N090SC1 onsemi

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onsemi

NTH4L020N090SC1

N-Channel 900 V 116A (Tc) 484W (Tc) Through Hole TO-247-4L

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
Manufactureronsemi
Manufacturer Product NumberNTH4L020N090SC1
DescriptionN-Channel 900 V 116A (Tc) 484W (Tc) Through Hole TO-247-4L
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 40.92USD 40.92
10USD 39.4878USD 394.878
25USD 38.0556USD 951.39
100USD 36.6234USD 3,662.34
250USD 35.1912USD 8,797.80
500USD 33.759USD 16,879.50
1,000USD 32.3268USD 32,326.80
  • Product Attributes
  • Ordering Notes

N-Channel 900 V 116A (Tc) 484W (Tc) Through Hole TO-247-4L

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
Series-
PackageTube
Product StatusActive
FET TypeN-Channel
TechnologySiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)900 V
Current - Continuous Drain (Id) @ 25°C116A (Tc)
Drive Voltage (Max Rds On, Min Rds On)15V, 18V
Rds On (Max) @ Id, Vgs28mOhm @ 60A, 15V
Vgs(th) (Max) @ Id4.3V @ 20mA
Gate Charge (Qg) (Max) @ Vgs196 nC @ 15 V
Vgs (Max)+22V, -8V
Input Capacitance (Ciss) (Max) @ Vds4415 pF @ 450 V
FET Feature-
Power Dissipation (Max)484W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-4L
Package / CaseTO-247-4
Base Product NumberNTH4L02
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NTH4L020N090SC1 | onsemi | GQGF Electronic Components