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NTH4L022N120M3S onsemi

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NTH4L022N120M3S

N-Channel 1200 V 68A (Tc) 352W (Tc) Through Hole TO-247-4L

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
Manufactureronsemi
Manufacturer Product NumberNTH4L022N120M3S
DescriptionN-Channel 1200 V 68A (Tc) 352W (Tc) Through Hole TO-247-4L
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 36.15USD 36.15
10USD 34.88475USD 348.8475
25USD 33.6195USD 840.4875
100USD 32.35425USD 3,235.425
250USD 31.089USD 7,772.25
500USD 29.82375USD 14,911.875
1,000USD 28.5585USD 28,558.50
  • Product Attributes
  • Ordering Notes

N-Channel 1200 V 68A (Tc) 352W (Tc) Through Hole TO-247-4L

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
Series-
PackageTube
Product StatusActive
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C68A (Tc)
Drive Voltage (Max Rds On, Min Rds On)18V
Rds On (Max) @ Id, Vgs30mOhm @ 40A, 18V
Vgs(th) (Max) @ Id4.4V @ 20mA
Gate Charge (Qg) (Max) @ Vgs151 nC @ 18 V
Vgs (Max)+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds3175 pF @ 800 V
FET Feature-
Power Dissipation (Max)352W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-4L
Package / CaseTO-247-4
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