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NTH4L025N065SC1 onsemi
NTH4L025N065SC1 onsemi

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onsemi

NTH4L025N065SC1

N-Channel 650 V 99A (Tc) 348W (Tc) Through Hole TO-247-4L

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
Manufactureronsemi
Manufacturer Product NumberNTH4L025N065SC1
DescriptionN-Channel 650 V 99A (Tc) 348W (Tc) Through Hole TO-247-4L
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 24.20USD 24.20
10USD 23.353USD 233.53
25USD 22.506USD 562.65
100USD 21.659USD 2,165.90
250USD 20.812USD 5,203.00
500USD 19.965USD 9,982.50
1,000USD 19.118USD 19,118.00
  • Product Attributes
  • Ordering Notes

N-Channel 650 V 99A (Tc) 348W (Tc) Through Hole TO-247-4L

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
Series-
PackageTube
Product StatusActive
FET TypeN-Channel
TechnologySiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C99A (Tc)
Drive Voltage (Max Rds On, Min Rds On)15V, 18V
Rds On (Max) @ Id, Vgs28.5mOhm @ 45A, 18V
Vgs(th) (Max) @ Id4.3V @ 15.5mA
Gate Charge (Qg) (Max) @ Vgs164 nC @ 18 V
Vgs (Max)+22V, -8V
Input Capacitance (Ciss) (Max) @ Vds3480 pF @ 15 V
FET Feature-
Power Dissipation (Max)348W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-4L
Package / CaseTO-247-4
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