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NTH4L028N170M1 onsemi
NTH4L028N170M1 onsemi

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onsemi

NTH4L028N170M1

N-Channel 1700 V 81A (Tc) 535W (Tc) Through Hole TO-247-4L

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
Manufactureronsemi
Manufacturer Product NumberNTH4L028N170M1
DescriptionN-Channel 1700 V 81A (Tc) 535W (Tc) Through Hole TO-247-4L
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 44.87USD 44.87
10USD 43.29955USD 432.9955
25USD 41.7291USD 1,043.2275
100USD 40.15865USD 4,015.865
250USD 38.5882USD 9,647.05
500USD 37.01775USD 18,508.875
1,000USD 35.4473USD 35,447.30
  • Product Attributes
  • Ordering Notes

N-Channel 1700 V 81A (Tc) 535W (Tc) Through Hole TO-247-4L

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
Series-
PackageTube
Product StatusActive
FET TypeN-Channel
TechnologySiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)1700 V
Current - Continuous Drain (Id) @ 25°C81A (Tc)
Drive Voltage (Max Rds On, Min Rds On)20V
Rds On (Max) @ Id, Vgs40mOhm @ 60A, 20V
Vgs(th) (Max) @ Id4.3V @ 20mA
Gate Charge (Qg) (Max) @ Vgs200 nC @ 20 V
Vgs (Max)+25V, -15V
Input Capacitance (Ciss) (Max) @ Vds4230 pF @ 800 V
FET Feature-
Power Dissipation (Max)535W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-4L
Package / CaseTO-247-4
Base Product NumberNTH4L02
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