GQGF Electronics
EnglishEnglish
USD
NTH4L060N090SC1 onsemi

Image shown is a representation. Verify specifications with the product datasheet.

onsemi

NTH4L060N090SC1

N-Channel 900 V 46A (Tc) 221W (Tc) Through Hole TO-247-4L

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
Manufactureronsemi
Manufacturer Product NumberNTH4L060N090SC1
DescriptionN-Channel 900 V 46A (Tc) 221W (Tc) Through Hole TO-247-4L
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 15.75USD 15.75
10USD 15.19875USD 151.9875
25USD 14.6475USD 366.1875
100USD 14.09625USD 1,409.625
250USD 13.545USD 3,386.25
500USD 12.99375USD 6,496.875
1,000USD 12.4425USD 12,442.50
  • Product Attributes
  • Ordering Notes

N-Channel 900 V 46A (Tc) 221W (Tc) Through Hole TO-247-4L

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
Series-
PackageTube
Product StatusActive
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)900 V
Current - Continuous Drain (Id) @ 25°C46A (Tc)
Drive Voltage (Max Rds On, Min Rds On)15V, 18V
Rds On (Max) @ Id, Vgs43mOhm @ 20A, 18V
Vgs(th) (Max) @ Id4.3V @ 5mA
Gate Charge (Qg) (Max) @ Vgs87 nC @ 15 V
Vgs (Max)+22V, -8V
Input Capacitance (Ciss) (Max) @ Vds1770 pF @ 450 V
FET Feature-
Power Dissipation (Max)221W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-4L
Package / CaseTO-247-4
Global Fast Shipping
100% Original Components
Quality Assured & Tested
Technical Support 24/7