GQGF Electronics
EnglishEnglish
USD
NTH4L075N065SC1 onsemi
NTH4L075N065SC1 onsemi

Image shown is a representation. Verify specifications with the product datasheet.

onsemi

NTH4L075N065SC1

N-Channel 650 V 38A (Tc) 148W (Tc) Through Hole TO-247-4L

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
Manufactureronsemi
Manufacturer Product NumberNTH4L075N065SC1
DescriptionN-Channel 650 V 38A (Tc) 148W (Tc) Through Hole TO-247-4L
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 11.26USD 11.26
10USD 10.8659USD 108.659
25USD 10.4718USD 261.795
100USD 10.0777USD 1,007.77
250USD 9.6836USD 2,420.90
500USD 9.2895USD 4,644.75
1,000USD 8.8954USD 8,895.40
  • Product Attributes
  • Ordering Notes

N-Channel 650 V 38A (Tc) 148W (Tc) Through Hole TO-247-4L

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
Series-
PackageTube
Product StatusActive
FET TypeN-Channel
TechnologySiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C38A (Tc)
Drive Voltage (Max Rds On, Min Rds On)15V, 18V
Rds On (Max) @ Id, Vgs85mOhm @ 15A, 18V
Vgs(th) (Max) @ Id4.3V @ 5mA
Gate Charge (Qg) (Max) @ Vgs61 nC @ 18 V
Vgs (Max)+22V, -8V
Input Capacitance (Ciss) (Max) @ Vds1196 pF @ 325 V
FET Feature-
Power Dissipation (Max)148W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-4L
Package / CaseTO-247-4
Base Product NumberNTH4L075
Global Fast Shipping
100% Original Components
Quality Assured & Tested
Technical Support 24/7