GQGF Electronics
EnglishEnglish
USD
NTH4LN019N65S3H onsemi

Image shown is a representation. Verify specifications with the product datasheet.

onsemi

NTH4LN019N65S3H

N-Channel 650 V 75A (Tc) 625W (Tc) Through Hole TO-247-4

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
Manufactureronsemi
Manufacturer Product NumberNTH4LN019N65S3H
DescriptionN-Channel 650 V 75A (Tc) 625W (Tc) Through Hole TO-247-4
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 22.59USD 22.59
10USD 21.79935USD 217.9935
25USD 21.0087USD 525.2175
100USD 20.21805USD 2,021.805
250USD 19.4274USD 4,856.85
500USD 18.63675USD 9,318.375
1,000USD 17.8461USD 17,846.10
  • Product Attributes
  • Ordering Notes

N-Channel 650 V 75A (Tc) 625W (Tc) Through Hole TO-247-4

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
SeriesSuperFET® III
PackageTube
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs19.3mOhm @ 37.5A, 10V
Vgs(th) (Max) @ Id4V @ 14.3mA
Gate Charge (Qg) (Max) @ Vgs282 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds15993 pF @ 400 V
FET Feature-
Power Dissipation (Max)625W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-4
Package / CaseTO-247-4
Global Fast Shipping
100% Original Components
Quality Assured & Tested
Technical Support 24/7