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NTH4LN095N65S3H onsemi

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onsemi

NTH4LN095N65S3H

N-Channel 650 V 30A (Tc) 208W (Tc) Through Hole TO-247-4

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
Manufactureronsemi
Manufacturer Product NumberNTH4LN095N65S3H
DescriptionN-Channel 650 V 30A (Tc) 208W (Tc) Through Hole TO-247-4
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 8.85USD 8.85
10USD 8.54025USD 85.4025
25USD 8.2305USD 205.7625
100USD 7.92075USD 792.075
250USD 7.611USD 1,902.75
500USD 7.30125USD 3,650.625
1,000USD 6.9915USD 6,991.50
  • Product Attributes
  • Ordering Notes

N-Channel 650 V 30A (Tc) 208W (Tc) Through Hole TO-247-4

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
SeriesSuperFET® III
PackageTube
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs95mOhm @ 15A, 10V
Vgs(th) (Max) @ Id4V @ 2.8mA
Gate Charge (Qg) (Max) @ Vgs58 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2833 pF @ 400 V
FET Feature-
Power Dissipation (Max)208W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-4
Package / CaseTO-247-4
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