GQGF Electronics
EnglishEnglish
USD
NTMT190N65S3HF onsemi

Image shown is a representation. Verify specifications with the product datasheet.

onsemi

NTMT190N65S3HF

N-Channel 650 V 20A (Tc) 162W (Tc) Surface Mount 4-PQFN (8x8)

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
Manufactureronsemi
Manufacturer Product NumberNTMT190N65S3HF
DescriptionN-Channel 650 V 20A (Tc) 162W (Tc) Surface Mount 4-PQFN (8x8)
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 5.31USD 5.31
10USD 5.12415USD 51.2415
25USD 4.9383USD 123.4575
100USD 4.75245USD 475.245
250USD 4.5666USD 1,141.65
500USD 4.38075USD 2,190.375
1,000USD 4.1949USD 4,194.90
  • Product Attributes
  • Ordering Notes

N-Channel 650 V 20A (Tc) 162W (Tc) Surface Mount 4-PQFN (8x8)

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
SeriesSuperFET® III, FRFET®
PackageTape & Reel (TR), Cut Tape (CT), Digi-Reel®
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs190mOhm @ 10A, 10V
Vgs(th) (Max) @ Id5V @ 430µA
Gate Charge (Qg) (Max) @ Vgs34 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1610 pF @ 400 V
FET Feature-
Power Dissipation (Max)162W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package4-PQFN (8x8)
Package / Case4-PowerTSFN
Global Fast Shipping
100% Original Components
Quality Assured & Tested
Technical Support 24/7