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NTMTSC1D6N10MCTXG onsemi

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onsemi

NTMTSC1D6N10MCTXG

N-Channel 100 V 35A (Ta), 267A (Tc) 5.1W (Ta), 291W (Tc) Surface Mount, Wettable Flank 8-TDFNW (8.3x8.4)

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
Manufactureronsemi
Manufacturer Product NumberNTMTSC1D6N10MCTXG
DescriptionN-Channel 100 V 35A (Ta), 267A (Tc) 5.1W (Ta), 291W (Tc) Surface Mount, Wettable Flank 8-TDFNW (8.3x8.4)
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 7.04USD 7.04
10USD 6.7936USD 67.936
25USD 6.5472USD 163.68
100USD 6.3008USD 630.08
250USD 6.0544USD 1,513.60
500USD 5.808USD 2,904.00
1,000USD 5.5616USD 5,561.60
  • Product Attributes
  • Ordering Notes

N-Channel 100 V 35A (Ta), 267A (Tc) 5.1W (Ta), 291W (Tc) Surface Mount, Wettable Flank 8-TDFNW (8.3x8.4)

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
Series-
PackageTape & Reel (TR), Cut Tape (CT), Digi-Reel®
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C35A (Ta), 267A (Tc)
Rds On (Max) @ Id, Vgs1.7mOhm @ 90A, 10V
Vgs(th) (Max) @ Id4V @ 650µA
Gate Charge (Qg) (Max) @ Vgs106 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds7630 pF @ 50 V
FET Feature-
Power Dissipation (Max)5.1W (Ta), 291W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount, Wettable Flank
Supplier Device Package8-TDFNW (8.3x8.4)
Package / Case8-PowerTDFN
Base Product NumberNTMTSC1
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