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NTMTSC4D2N10GTXG onsemi

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onsemi

NTMTSC4D2N10GTXG

N-Channel 100 V 21A (Ta), 178A (Tc) 3.9W (Ta), 267W (Tc) Surface Mount, Wettable Flank 8-TDFNW (8.3x8.4)

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
Manufactureronsemi
Manufacturer Product NumberNTMTSC4D2N10GTXG
DescriptionN-Channel 100 V 21A (Ta), 178A (Tc) 3.9W (Ta), 267W (Tc) Surface Mount, Wettable Flank 8-TDFNW (8.3x8.4)
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 0.00000USD 0.00000
10USD 0.00000USD 0.00000
25USD 0.00000USD 0.00000
100USD 0.00000USD 0.00000
250USD 0.00000USD 0.00000
500USD 0.00000USD 0.00000
1,000USD 0.00000USD 0.00000
  • Product Attributes
  • Ordering Notes

N-Channel 100 V 21A (Ta), 178A (Tc) 3.9W (Ta), 267W (Tc) Surface Mount, Wettable Flank 8-TDFNW (8.3x8.4)

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
Series-
PackageTape & Reel (TR)
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C21A (Ta), 178A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs4.2mOhm @ 88A, 10V
Vgs(th) (Max) @ Id4V @ 450µA
Gate Charge (Qg) (Max) @ Vgs159 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds10450 pF @ 50 V
FET Feature-
Power Dissipation (Max)3.9W (Ta), 267W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount, Wettable Flank
Supplier Device Package8-TDFNW (8.3x8.4)
Package / Case8-PowerTDFN
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