GQGF Electronics
EnglishEnglish
USD
NTP067N65S3H onsemi

Image shown is a representation. Verify specifications with the product datasheet.

onsemi

NTP067N65S3H

N-Channel 650 V 40A (Tc) 266W (Tc) Through Hole TO-220-3

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
Manufactureronsemi
Manufacturer Product NumberNTP067N65S3H
DescriptionN-Channel 650 V 40A (Tc) 266W (Tc) Through Hole TO-220-3
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 7.14USD 7.14
10USD 6.8901USD 68.901
25USD 6.6402USD 166.005
100USD 6.3903USD 639.03
250USD 6.1404USD 1,535.10
500USD 5.8905USD 2,945.25
1,000USD 5.6406USD 5,640.60
  • Product Attributes
  • Ordering Notes

N-Channel 650 V 40A (Tc) 266W (Tc) Through Hole TO-220-3

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
SeriesSuperFET® III
PackageTube
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs67mOhm @ 20A, 10V
Vgs(th) (Max) @ Id4V @ 3.9mA
Gate Charge (Qg) (Max) @ Vgs80 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds3750 pF @ 400 V
FET Feature-
Power Dissipation (Max)266W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3
Global Fast Shipping
100% Original Components
Quality Assured & Tested
Technical Support 24/7
NTP067N65S3H | onsemi | GQGF Electronic Components