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NTP165N65S3H onsemi

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onsemi

NTP165N65S3H

N-Channel 650 V 19A (Tc) 142W (Tc) Through Hole TO-220-3

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
Manufactureronsemi
Manufacturer Product NumberNTP165N65S3H
DescriptionN-Channel 650 V 19A (Tc) 142W (Tc) Through Hole TO-220-3
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 3.68USD 3.68
10USD 3.5512USD 35.512
25USD 3.4224USD 85.56
100USD 3.2936USD 329.36
250USD 3.1648USD 791.20
500USD 3.036USD 1,518.00
1,000USD 2.9072USD 2,907.20
  • Product Attributes
  • Ordering Notes

N-Channel 650 V 19A (Tc) 142W (Tc) Through Hole TO-220-3

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
SeriesSuperFET® III
PackageTube
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs165mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id4V @ 1.6mA
Gate Charge (Qg) (Max) @ Vgs35 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1808 pF @ 400 V
FET Feature-
Power Dissipation (Max)142W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3
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