GQGF Electronics
EnglishEnglish
USD
NTTFS115P10M5 onsemi

Image shown is a representation. Verify specifications with the product datasheet.

onsemi

NTTFS115P10M5

P-Channel 100 V 2A (Ta), 13A (Tc) 900mW (Ta), 41W (Tc) Surface Mount 8-WDFN (3.3x3.3)

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
Manufactureronsemi
Manufacturer Product NumberNTTFS115P10M5
DescriptionP-Channel 100 V 2A (Ta), 13A (Tc) 900mW (Ta), 41W (Tc) Surface Mount 8-WDFN (3.3x3.3)
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 1.01USD 1.01
10USD 0.97465USD 9.7465
25USD 0.93930USD 23.4825
100USD 0.90395USD 90.395
250USD 0.86860USD 217.15
500USD 0.83325USD 416.625
1,000USD 0.79790USD 797.90
  • Product Attributes
  • Ordering Notes

P-Channel 100 V 2A (Ta), 13A (Tc) 900mW (Ta), 41W (Tc) Surface Mount 8-WDFN (3.3x3.3)

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
Series-
PackageTape & Reel (TR), Cut Tape (CT), Digi-Reel®
Product StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C2A (Ta), 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs120mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id4V @ 45µA
Gate Charge (Qg) (Max) @ Vgs9.2 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds637 pF @ 50 V
FET Feature-
Power Dissipation (Max)900mW (Ta), 41W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-WDFN (3.3x3.3)
Package / Case8-PowerWDFN
Global Fast Shipping
100% Original Components
Quality Assured & Tested
Technical Support 24/7