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NVH4L020N120SC1 onsemi

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NVH4L020N120SC1

N-Channel 1200 V 102A (Tc) 510W (Tc) Through Hole TO-247-4L

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
Manufactureronsemi
Manufacturer Product NumberNVH4L020N120SC1
DescriptionN-Channel 1200 V 102A (Tc) 510W (Tc) Through Hole TO-247-4L
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 52.51USD 52.51
10USD 50.67215USD 506.7215
25USD 48.8343USD 1,220.8575
100USD 46.99645USD 4,699.645
250USD 45.1586USD 11,289.65
500USD 43.32075USD 21,660.375
1,000USD 41.4829USD 41,482.90
  • Product Attributes
  • Ordering Notes

N-Channel 1200 V 102A (Tc) 510W (Tc) Through Hole TO-247-4L

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
SeriesAutomotive, AEC-Q101
PackageTube
Product StatusActive
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C102A (Tc)
Drive Voltage (Max Rds On, Min Rds On)20V
Rds On (Max) @ Id, Vgs28mOhm @ 60A, 20V
Vgs(th) (Max) @ Id4.3V @ 20mA
Gate Charge (Qg) (Max) @ Vgs220 nC @ 20 V
Vgs (Max)+25V, -15V
Input Capacitance (Ciss) (Max) @ Vds2943 pF @ 800 V
FET Feature-
Power Dissipation (Max)510W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-4L
Package / CaseTO-247-4
Base Product NumberNVH4L020
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