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NVH4L080N120SC1 onsemi

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NVH4L080N120SC1

N-Channel 1200 V 29A (Tc) 170mW (Tc) Through Hole TO-247-4L

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
Manufactureronsemi
Manufacturer Product NumberNVH4L080N120SC1
DescriptionN-Channel 1200 V 29A (Tc) 170mW (Tc) Through Hole TO-247-4L
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 19.73USD 19.73
10USD 19.03945USD 190.3945
25USD 18.3489USD 458.7225
100USD 17.65835USD 1,765.835
250USD 16.9678USD 4,241.95
500USD 16.27725USD 8,138.625
1,000USD 15.5867USD 15,586.70
  • Product Attributes
  • Ordering Notes

N-Channel 1200 V 29A (Tc) 170mW (Tc) Through Hole TO-247-4L

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
SeriesAutomotive, AEC-Q101
PackageTube
Product StatusActive
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C29A (Tc)
Drive Voltage (Max Rds On, Min Rds On)20V
Rds On (Max) @ Id, Vgs110mOhm @ 20A, 20V
Vgs(th) (Max) @ Id4.3V @ 5mA
Gate Charge (Qg) (Max) @ Vgs56 nC @ 20 V
Vgs (Max)+25V, -15V
Input Capacitance (Ciss) (Max) @ Vds1670 pF @ 800 V
FET Feature-
Power Dissipation (Max)170mW (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-4L
Package / CaseTO-247-4
Base Product NumberNVH4L080
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