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NVMTS1D0N04CLTXG onsemi
NVMTS1D0N04CLTXG onsemi

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onsemi

NVMTS1D0N04CLTXG

N-Channel 40 V 51.3A (Ta), 291A (Tc) 4.7W (Ta), 153W (Tc) Surface Mount 8-DFNW (8.3x8.4)

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
Manufactureronsemi
Manufacturer Product NumberNVMTS1D0N04CLTXG
DescriptionN-Channel 40 V 51.3A (Ta), 291A (Tc) 4.7W (Ta), 153W (Tc) Surface Mount 8-DFNW (8.3x8.4)
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 0.00000USD 0.00000
10USD 0.00000USD 0.00000
25USD 0.00000USD 0.00000
100USD 0.00000USD 0.00000
250USD 0.00000USD 0.00000
500USD 0.00000USD 0.00000
1,000USD 0.00000USD 0.00000
  • Product Attributes
  • Ordering Notes

N-Channel 40 V 51.3A (Ta), 291A (Tc) 4.7W (Ta), 153W (Tc) Surface Mount 8-DFNW (8.3x8.4)

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
SeriesAutomotive, AEC-Q101
PackageTape & Reel (TR)
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40 V
Current - Continuous Drain (Id) @ 25°C51.3A (Ta), 291A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs1mOhm @ 50A, 10V
Vgs(th) (Max) @ Id3V @ 210µA
Gate Charge (Qg) (Max) @ Vgs122 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds7408 pF @ 25 V
FET Feature-
Power Dissipation (Max)4.7W (Ta), 153W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-DFNW (8.3x8.4)
Package / Case8-PowerTDFN
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